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Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

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Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

Name: Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For EO Devices
Brand: Crystro
Price: 20 USD

China Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices wholesale

Brand Name : Crystro

Model Number : CR210816-01

Certification : SGS/COC

Place of Origin : China

MOQ : 1pc

Price : USD 20-200/pc

Payment Terms : T/T, Western Union, MoneyGram, Paypal

Supply Ability : 2000pcs per month

Delivery Time : 3-5 weeks

Packaging Details : Transparent clean box

Material : Fe doped LiTaO3 Crystals Lithium Tantanlate Wafer Used For E-O devices

Mohs Hardness : 5.5

Diameter : Φ4''-6''

Tol(±) : <0.20 mm

Thickness : 0.18 ~ 0.5mm or more

Primary Flat : 22mm /32mm /42.5mm /57.5mm

LTV (5mmx5mm) : <1µm

TTV : <3µm

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Fe doped LiTaO3 Crystals Lithium Tantanlate Wafer Used For E-O devices

LiTaO₃is an E-O crystal widesly used for E-O devices, due to its good optical NLO and E-O properties, as well as high damage threshold. Crystro supplies hign quality LiTaO₃ boules and wafers with the following specifications for standard applications. We can also offer other specification upon request:

Crystro's Fe:LiTaO3 is grown by Czochralski method.Max diameter reach 6inch,Crystro can offer kinds of size per required.

Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.We looking forward to meet you.

Typical Specifications:

Material	LiTaO3 wafers(White or Black &Fe doped)
Curie Temp	603±2℃
Cutting Angle	X/Y/Z/X112Y/Y36/Y42/Y48/etc
Diameter/size	2”/3”/4" LT wafer or other size
Tol(±)	<0.20 mm
Thickness	0.18 ~ 0.5mm or more
Primary Flat	22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm)	<1µm
TTV	<3µm
Bow	-30<bow<30
Warp	<40µm
PLTV(<0.5um)	≥95%(5mm*5mm)
Orientation Flat	All available
Surface Type	Single Side Polished /Double Sides Polished
Polished side Ra	<0.5nm
Back Side Criteria	General is 0.2-0.5µm or as customized
Edge Criteria	R=0.2mm or Bullnose
Fe doped	Fe doped for saw grade LN< wafers
Wafer Surface Criteria	Transmissivity	general:5.9x10-11<s<2.0*10-10 at 25℃
	Contamination,	None
	Particles ￠>0.3 µ m	<= 30
	Scratch , Chipping	None
	Defect	No edge cracks, scratches, saw marks, stains

Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

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Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

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